copyright@ semipower electronic technology co., ltd. all rights reserved. june. 2014. rev.1.0 sw 7 n6 0d features high ruggedness r ds( on ) (max 1.2 ? )@v gs =10v gate charge (typical 30 nc) improved dv/dt capability 100% avalanche tested general description this power mosfet is produced with advanced vdmos technology of samwin. this technology enable power mosfet to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. it is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances. n - channel to - 220f mosfet absolute maximum ratings symbol parameter value unit v dss drain to source voltage 6 0 0 v i d continuous drain current (@t c =25 o c) 7 a continuous drain current (@t c =100 o c) 4.2 a i dm drain current pulsed (note 1) 28 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note 2) 420 mj e ar repetitive avalanche energy (note 1) 49 mj dv/dt peak diode recovery dv/dt (note 3) 5 v/ns p d total power dissipation (@t c =25 o c) 23.76 w derating factor above 25 o c 0.19 w/ o c t stg , t j operating junction temperature & storage temperature - 55 ~ + 150 o c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 o c thermal characteristics symbol parameter value unit r thjc thermal resistance, junction to case 5.26 o c/w r thcs thermal resistance, case to sink o c/w r thja thermal resistance, junction to ambient 49.21 o c /w 1/5 *. drain current is limited by junction temperature. bv dss : 6 0 0v i d : 10a r ds(on) : 1.2 1. gate 2. drain 3. source 1 2 3 1 2 3 to - 220f samwin item sales type marking package packaging 1 sw f 7n60 SW7N60D to - 220f tube order codes
copyright@ semipower electronic technology co., ltd. all rights reserved. june. 2014. rev.1.0 electrical characteristic ( t c = 25 o c unless otherwise specified ) symbol parameter test conditions min. typ. max. unit off characteristics bv dss drain to source breakdown voltage v gs =0v, i d =250ua 6 0 0 v bv dss / t j breakdown voltage temperature coefficient i d =250ua, referenced to 25 o c 0.47 v/ o c i dss drain to source leakage current v ds =6 0 0v, v gs =0v 1 ua v ds = 48 0v, t c =125 o c 5 0 ua i gss gate to source leakage current, forward v gs =30v, v ds =0v 100 na v gs = - 30v, v ds =0v - 100 na gate to source leakage current, reverse on characteristics v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2.5 4.5 v r ds(on) drain to source on state resistance v gs =10v, i d = 3.5a 1.1 1.2 ? g fs forward transconductance vds = 30 v, id = 3.5 a 6 s dynamic characteristics c iss input capacitance v gs =0v, v ds =25v, f=1mhz 1000 pf c oss output capacitance 115 c rss reverse transfer capacitance 25 t d(on) turn on delay time v ds =300v, i d = 7 a, r g =25? (note 4 5 ) 14 ns tr rising time 32 t d(off) turn off delay time 67 t f fall time 35 q g total gate charge v ds = 480 v, v gs =10v, i d =7a (note 4 5 ) 30 nc q gs gate - source charge 5 q gd gate - drain charge 15 source to drain diode ratings characteristics symbol parameter test conditions min. typ. max. unit i s continuous source current integral reverse p - n junction diode in the mosfet 7 a i sm pulsed source current 28 a v sd diode forward voltage drop. i s =7a, v gs =0v 1.5 v t rr reverse recovery time i s =7a, v gs =0v, di f / dt =100a/us 315 ns q rr breakdown voltage charge 3.1 u c . notes 1. repeatitive rating : pulse width limited by junction temperature. 2. l = 17.7mh, i as = 7a, v dd = 50v, r g =25?, starting t j = 25 o c 3. i sd 10 a, di / dt = 100a/us, v dd bv dss , staring t j =25 o c 4. pulse test : pulse width 300us, duty cycle 2% 5. essentially independent of operating temperature. 2/5 samwin sw 7 n6 0d
copyright@ semipower electronic technology co., ltd. all rights reserved. june. 2014. rev.1.0 fig. 1. on - state characteristics fig. 3. gate charge characteristics 3/5 samwin fig. 2. on - resistance variation vs. drain current and gate voltage fig. 4. on state current vs. diode forward voltage fig 5. breakdown voltage variation vs. junction temperature fig. 6. on resistance variation vs. junction temperature sw 7 n6 0d
copyright@ semipower electronic technology co., ltd. all rights reserved. june. 2014. rev.1.0 4/5 samwin fig. 7 . maximum safe operating area fig. 8 . transient thermal response curve fig. 9. c apacitance characteristics fig. 10. gate charge test circuit & waveform v ds same type as dut dut v gs 3ma q g q gs q gd v gs charge nc 10v sw 7 n6 0d
copyright@ semipower electronic technology co., ltd. all rights reserved. june. 2014. rev.1.0 v dd dut v ds r l r gs 10v in 10% v ds v in 90% 10% t d(on) t r t on t d(off) t off t f fig. 11 . switching time test circuit & waveform fig. 12 . unclamped inductive switching test circuit & waveform 5/5 samwin fig. 13 . peak diode recovery dv / dt test circuit & waveform v dd same type as dut v ds l r g 10v gs i s + - v ds dut *. dv/dt controlled by rg *. is controlled by pulse period v gs (driver) i s (dut) v ds (dut) body diode forward voltage drop v f diode recovery dv/dt i rm di/dt 10v diode reverse current v dd sw 7 n6 0d
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